The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Mar. 04, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device of an embodiment includes: a first trench in a silicon carbide layer and extending in a first direction; a second trench and a third trench located in a second direction orthogonal to the first direction with respect to the first trench and adjacent to each other in the first direction, n type first silicon carbide region, p type second silicon carbide region on the first silicon carbide region, n type third silicon carbide region on the second silicon carbide region, p type fourth silicon carbide region between the first silicon carbide region and the second trench, and p type fifth silicon carbide region located between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode; and a second electrode. A part of the first silicon carbide region is located between the second trench and the third trench.