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For the Inventor, By the Inventor

Yamaguchi, Japan

Katsuhiko Nakai

USPTO Granted Patents = 16 

 

Average Co-Inventor Count = 2.1

ph-index = 3

Forward Citations = 20(Granted Patents)


Location History:

  • Hikari Yamaguchi, JP (2008)
  • Hikari, JP (2013)
  • Yamaguchi, JP (2011 - 2016)

Company Filing History:

goldMedal16 out of 302 
 
Siltronic Ag
 patents

Years Active: 2008-2016

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16 patents (USPTO):Explore Patents
1. 9303332 - Silicon single crystal substrate and method of manufacturing the same (2016-04-05),
2. 8961685 - Method of manufacturing silicon single crystal, silicon single crystal, and wafer (2015-02-24),
3. RE45238 - Silicon wafer and method of manufacturing the same (2014-11-10),
4. 8872307 - P-type silicon single crystal and method of manufacturing the same (2014-10-28),
5. 8835284 - Method of manufacturing annealed wafer (2014-09-16),
6. 8545622 - Annealed wafer and manufacturing method of annealed wafer (2013-10-01),
7. 8524002 - Silicon wafer and method for producing the same (2013-09-03),
8. 8524001 - Silicon wafer and method for producing the same (2013-09-03),
9. 8382894 - Process for the preparation of silicon wafer with reduced slip and warpage (2013-02-26),
10. 8357939 - Silicon wafer and production method therefor (2013-01-22),
11. 8343618 - Silicon wafer and method of manufacturing the same (2013-01-01),
12. 8241421 - Epitaxial wafer and production method thereof (2012-08-14),
13. 8197594 - Silicon wafer for semiconductor and manufacturing method thereof (2012-06-12),
14. 8142885 - Silicon wafer and method for manufacturing the same (2012-03-27),
15. 7875115 - Epitaxial wafer and method for producing epitaxial wafers (2011-01-25),

Title: Innovator Katsuhiko Nakai: Advancements in Silicon Technology

Introduction: Katsuhiko Nakai, an accomplished inventor located in Yamaguchi, Japan, holds an impressive portfolio of 16 patents. His pioneering work in the field of silicon material and manufacturing processes has significantly contributed to advancements in semiconductor technology.

Latest Patents: Among Nakai's latest innovations are several critical patents concerning silicon single crystal substrates. His first patent details a novel method of manufacturing silicon single crystal substrates that exhibit uniform resistance and minimal bulk micro defects (BMDs). These substrates, formed from Czochralski silicon single crystals, exhibit resistivity of not lower than 50 Ω·cm and minimal variation in surface resistivity. Another significant patent addresses the manufacturing of P-type silicon single crystals, which produce wafers with high resistivity and superior radial uniformity. This invention utilizes a specific concentration of boron and phosphorus to optimize the crystal quality.

Career Highlights: Nakai has established himself as a key figure in the semiconductor industry, primarily working with Siltronic AG, a leading manufacturer in the field. His expertise in silicon crystal technology has propelled the company to new heights in semiconductor manufacturing, enhancing performance and reliability in electronic devices.

Collaborations: Throughout his career, Nakai has worked alongside prominent colleagues, including Masamichi Ohkubo and Masayuki Fukuda. Their collaborative efforts have further advanced the research and development of silicon technologies, solidifying their contributions to the industry.

Conclusion: Katsuhiko Nakai's impressive body of work demonstrates a commitment to innovation in silicon technology. His patents reflect a deep understanding of materials science and manufacturing processes, driving forward the semiconductor industry. As he continues to contribute to advancements in this vital field, Nakai's inventions will undoubtedly shape the future of technology.

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