The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Nov. 10, 2011
Applicants:
Katsuhiko Nakai, Yamaguchi, JP;
Masamichi Ohkubo, Burghausen, DE;
Inventors:
Katsuhiko Nakai, Yamaguchi, JP;
Masamichi Ohkubo, Burghausen, DE;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/14 (2006.01); B32B 3/02 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 33/00 (2010.01); H01L 29/04 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01); C30B 33/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); C30B 15/00 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01); H01L 21/02532 (2013.01);
Abstract
P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cmand the ratio of the phosphorus concentration to the boron concentration is not lower than 0.42 and not higher than 0.50.