The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Sep. 12, 2012
Katsuhiko Nakai, Yamaguchi, JP;
Masamichi Ohkubo, Yamaguchi, JP;
Hikaru Sakamoto, Hikari, JP;
SILTRONIC AG, Munich, DE;
Abstract
Silicon single crystal substrates having uniform resistance, few BMDs in a surface layer and a moderate number of BMDs in a center of thickness of the substrate are formed from Czochralski silicon single crystals. The substrates have a resistivity in the center of a first main surface not lower than 50 Ω·cm and a rate of change in resistivity in the first main surface not higher than 3%, an average density of bulk micro defects in a region between the first main surface and a plane at a depth of 50 μm of less than 1×10/cm, and an average density of bulk micro defects in a region lying between a plane at a depth of 300 μm and a plane at a depth of 400 μm from the first main surface not lower than 1×10/cmand not higher than 1×10/cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile