The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Sep. 19, 2007
Katsuhiko Nakai, Yamaguchi, JP;
Wilfried Von Ammon, Hochburg/Ach, AT;
Sei Fukushima, Kanagawa, JP;
Herbert Schmidt, Halsbach, DE;
Martin Weber, Kastl, DE;
Katsuhiko Nakai, Yamaguchi, JP;
Wilfried von Ammon, Hochburg/Ach, AT;
Sei Fukushima, Kanagawa, JP;
Herbert Schmidt, Halsbach, DE;
Martin Weber, Kastl, DE;
Siltronic AG, Munich, DE;
Abstract
Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×10/cm, and a density of BMDs with sizes of ≧300 nm≦1×10/cm, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.