The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Dec. 22, 2006
Applicants:
Katsuhiko Nakai, Hikari, JP;
Koji Fukuhara, Hikari, JP;
Inventors:
Katsuhiko Nakai, Hikari, JP;
Koji Fukuhara, Hikari, JP;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
An annealed wafer in which oxygen precipitation is uniform in the substrate plane and a manufacturing method thereof are provided. A nitrogen-doped silicon single crystal substrate pulled at the cooling rate of 4° C./minute or more during crystal growth between 1100 and 1000° C. wherein the nitrogen concentration is 1×10to 5×10atoms/cmand V/G satisfies predetermined conditions serves as a substrate, and the substrate is subjected to heat treatment in a non-oxidative atmosphere.