The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Dec. 15, 2009
Applicants:
Masayuki Fukuda, Yamaguchi, JP;
Katsuhiko Nakai, Yamaguchi, JP;
Inventors:
Masayuki Fukuda, Yamaguchi, JP;
Katsuhiko Nakai, Yamaguchi, JP;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface to a depth of 20 μm and having a diagonal length of 200 nm or more are present at a concentration of ≦2×10/cm, and BMDs located at a position below a depth ≧50 μm have a diagonal length of ≧10 nm to ≦50 nm and a concentration of ≧1×10/cm.