The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2012

Filed:

Oct. 01, 2010
Applicants:

Katsuhiko Nakai, Yamaguchi, JP;

Timo Mueller, Burghausen, DE;

Atsushi Ikari, Yamaguchi, JP;

Wilfried Von Ammon, Hochburg, AT;

Martin Weber, Kastl, DE;

Inventors:

Katsuhiko Nakai, Yamaguchi, JP;

Timo Mueller, Burghausen, DE;

Atsushi Ikari, Yamaguchi, JP;

Wilfried von Ammon, Hochburg, AT;

Martin Weber, Kastl, DE;

Assignee:

Siltronic AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by:


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