The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Dec. 16, 2009
Katsuhiko Nakai, Yamaguchi, JP;
Atsushi Ikari, Yamaguchi, JP;
Masamichi Ohkubo, Yamaguchi, JP;
Siltronic AG, Munich, DE;
Abstract
Silicon wafers having excellent voltage resistance characteristics of an oxide film and high C-mode characteristics are derived from single crystal silicon ingots doped with nitrogen and hydrogen, characterized in that a plurality of voids constituting a bubble-like void aggregates are present ≧50% relative to total voids; a Vregion having a void density of over 2×10/cmand below 1×10/cmis ≦20% of the total area of wafer; a Vregion having a void density of 5×10to 2×10/cmoccupies ≧80% of the total area of the wafer; and bulk microdefect density is ≧5×10/cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile