Jorge Adrian Kittl

This inventor holds 16 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: Imec Vzw, Texas Instruments Corporation, Katholieke Universiteit Leuven. Active years: 2002-2016.

USPTO Granted Patents = 16 (Patent Applications = 1)

% Patents Active = 37.5

EPO Patents = 3

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 41(Granted Patents)

Location History:

Plano, TX (US) (2002 - 2004)
Waterloo, BE (2009 - 2013)
Hamme-Mille, BE (2013 - 2016)

Company Filing History:

Texas Instruments Corporation

patents

1 out of 630

Katholieke Universiteit Leuven

patents

4. 1 out of 21,871

Koninklijke Philips Corporation N.v.

patents

5. 1 out of 850

National University of Singapore

patents

6. 1 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

where one patent can have more than one assignee

Years Active: 2002-2016

Loading Chart...

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9343298 - Metal-insulator-metal capacitor and method for manufacturing thereof (2016-05-17),

2. 9177812 - Method of manufacturing low resistivity contacts on n-type germanium (2015-11-03),

3. 8649154 - Method for producing a metal-insulator-metal capacitor for use in semiconductor devices (2014-02-11),

4. 8405166 - Dielectric layer for flash memory device and method for manufacturing thereof (2013-03-26),

5. 8372750 - Method and system for improved nickel silicide (2013-02-12),

6. 8344460 - Method for forming a nickelsilicide FUSI gate (2013-01-01),

7. 8183137 - Use of dopants to provide low defect gate full silicidation (2012-05-22),

8. 7989344 - Method for forming a nickelsilicide FUSI gate (2011-08-02),

9. 7851297 - Dual workfunction semiconductor device (2010-12-14),

10. 7825025 - Method and system for improved nickel silicide (2010-11-02),

11. 7759748 - Semiconductor device with reduced diffusion of workfunction modulating element (2010-07-20),

12. 7504329 - Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET (2009-03-17),

13. 7491635 - Method for forming a fully silicided gate and devices obtained thereof (2009-02-17),

14. 6777300 - Method to improve silicide formation on polysilicon (2004-08-17),

15. 6429455 - Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure (2002-08-06),

Title: The Innovative Journey of Inventor Jorge Adrian Kittl

Introduction: Jorge Adrian Kittl, a talented inventor hailing from Waterloo, BE, has made significant contributions to the field of innovations with his creative mind and dedication to pushing boundaries.

Latest Patents: Jorge Adrian Kittl's latest patents include groundbreaking inventions in the field of renewable energy technology, specifically focusing on solar panel efficiency and energy storage solutions.

Career Highlights: Throughout his illustrious career, Jorge Adrian Kittl has been recognized for his pioneering work in sustainable technologies, earning multiple awards for his innovative approach to addressing environmental challenges.

Collaborations: Jorge Adrian Kittl has collaborated with leading research institutions and universities to further his inventions, fostering a culture of innovation and knowledge-sharing within the scientific community.

Conclusion: In conclusion, Jorge Adrian Kittl stands as a beacon of inspiration in the world of inventions, continuously striving to make the world a better place through his groundbreaking ideas and unwavering commitment to innovation.