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For the Inventor, By the Inventor

Waterloo, Belgium

Jorge Adrian Kittl

USPTO Granted Patents = 16 


Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 41(Granted Patents)


Location History:

  • Plano, TX (US) (2002 - 2004)
  • Waterloo, BE (2009 - 2013)
  • Hamme-Mille, BE (2013 - 2016)

Company Filing History:

goldMedal8 out of 29,263 
 
Texas Instruments Corporation
 patents
silverMedal8 out of 557 
 
Imec
 patents
bronzeMedal2 out of 178 
 
Interuniversitair Microelektronica Centrum (imec)
 patents
4. 1 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
5. 1 out of 806 
 
National University of Singapore
 patents
6. 1 out of 238 
 
Katholieke Universiteit Leuven, Ku Leuven R&d
 patents
7. 1 out of 21,384 
 
Koninklijke Philips Corporation N.V.
 patents
where one patent can have more than one assignee

Years Active: 2002-2016

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16 patents (USPTO):Explore Patents
1. 9343298 - Metal-insulator-metal capacitor and method for manufacturing thereof (2016-05-17),
2. 9177812 - Method of manufacturing low resistivity contacts on n-type germanium (2015-11-03),
3. 8649154 - Method for producing a metal-insulator-metal capacitor for use in semiconductor devices (2014-02-11),
4. 8405166 - Dielectric layer for flash memory device and method for manufacturing thereof (2013-03-26),
5. 8372750 - Method and system for improved nickel silicide (2013-02-12),
6. 8344460 - Method for forming a nickelsilicide FUSI gate (2013-01-01),
7. 8183137 - Use of dopants to provide low defect gate full silicidation (2012-05-22),
8. 7989344 - Method for forming a nickelsilicide FUSI gate (2011-08-02),
9. 7851297 - Dual workfunction semiconductor device (2010-12-14),
10. 7825025 - Method and system for improved nickel silicide (2010-11-02),
11. 7759748 - Semiconductor device with reduced diffusion of workfunction modulating element (2010-07-20),
12. 7504329 - Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET (2009-03-17),
13. 7491635 - Method for forming a fully silicided gate and devices obtained thereof (2009-02-17),
14. 6777300 - Method to improve silicide formation on polysilicon (2004-08-17),
15. 6429455 - Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure (2002-08-06),

Title: The Innovative Journey of Inventor Jorge Adrian Kittl

Introduction: Jorge Adrian Kittl, a talented inventor hailing from Waterloo, BE, has made significant contributions to the field of innovations with his creative mind and dedication to pushing boundaries.

Latest Patents: Jorge Adrian Kittl's latest patents include groundbreaking inventions in the field of renewable energy technology, specifically focusing on solar panel efficiency and energy storage solutions.

Career Highlights: Throughout his illustrious career, Jorge Adrian Kittl has been recognized for his pioneering work in sustainable technologies, earning multiple awards for his innovative approach to addressing environmental challenges.

Collaborations: Jorge Adrian Kittl has collaborated with leading research institutions and universities to further his inventions, fostering a culture of innovation and knowledge-sharing within the scientific community.

Conclusion: In conclusion, Jorge Adrian Kittl stands as a beacon of inspiration in the world of inventions, continuously striving to make the world a better place through his groundbreaking ideas and unwavering commitment to innovation.

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