The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Oct. 23, 2007
Hongyu Yu, Leuven, BE;
Shou-zen Chang, Tervuren, BE;
Jorge Adrian Kittl, Waterloo, BE;
Anne Lauwers, Aartselaar, BE;
Anabela Veloso, Leuven, BE;
HongYu Yu, Leuven, BE;
Shou-Zen Chang, Tervuren, BE;
Jorge Adrian Kittl, Waterloo, BE;
Anne Lauwers, Aartselaar, BE;
Anabela Veloso, Leuven, BE;
IMEC, Leuven, BE;
Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), Hsin Chu, TW;
Abstract
A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.