The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Sep. 16, 1999
Vincent Maurice McNeil, Dallas, TX (US);
Jorge Adrian Kittl, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method to enhance the formation of nucleation sites on at least one narrow silicon structure comprises the step: forming at least one nucleation region ( ): masking the at least one narrow silicon structure ( ) with a mask ( ); treating the at least one nucleation region ( ) to enhance an ability of said region to form C54 nucleation sites; and removing the mask from the at least one narrow silicon structure ( ). In another embodiment, a silicon device capable of undergoing a phase transformation comprises at least one narrow silicon structure ( ) formed of TiSi ; and at least one nucleation region ( ) attached to the at least one narrow silicon region ( ), said at least one nucleation region ( ) having a width which is greater than a width of said at least one narrow silicon structure ( ) and said at least one nucleation region ( ) capable of generating a high density of C54 nucleation sites such that said high density of nucleation sites causes a phase transformation ( ) to propagate along the at least one silicon structure ( ).