Company Filing History:
Years Active: 1998-2002
Title: Vincent Maurice McNeil: Innovator in Silicon Technology
Introduction
Vincent Maurice McNeil is a notable inventor based in Dallas, TX (US). He has made significant contributions to the field of silicon technology, holding a total of 4 patents. His work focuses on enhancing the formation of nucleation sites on silicon structures, which is crucial for various applications in electronics.
Latest Patents
One of McNeil's latest patents is a method to enhance the formation of nucleation sites on silicon structures. This method involves several steps, including forming at least one nucleation region, masking the narrow silicon structure, treating the nucleation region to improve its ability to form C54 nucleation sites, and finally removing the mask. In another embodiment, he describes a silicon device capable of undergoing a phase transformation, which includes a narrow silicon structure made of TiSi and a nucleation region that generates a high density of C54 nucleation sites. This innovation allows for a phase transformation to propagate along the silicon structure, showcasing McNeil's expertise in the field.
Career Highlights
Vincent McNeil is currently employed at Texas Instruments Corporation, where he continues to develop innovative solutions in silicon technology. His work has been instrumental in advancing the capabilities of silicon structures, making them more efficient and effective for various applications.
Collaborations
Throughout his career, McNeil has collaborated with notable colleagues, including Douglas Ticknor Grider and Jorge A Kittl. These collaborations have contributed to the success of his projects and the advancement of technology in their field.
Conclusion
Vincent Maurice McNeil is a distinguished inventor whose work in silicon technology has led to significant advancements in the industry. His innovative methods and collaborations continue to influence the development of electronic devices.