The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Nov. 25, 1996
Applicant:
Inventors:
E Ajith Amerasekera, Plano, TX (US);
Vincent M McNeil, Dallas, TX (US);
Mark S Rodder, University Park, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257355 ; 257384 ; 257382 ; 257413 ; 257408 ; 438236 ; 438234 ; 438289 ; 438649 ;
Abstract
A technique for providing a design window for scaled technologies in which good electrostatic discharge/electrical over stress damage and optimum transistor operation can be achieved without the use of additional masks or design steps. The M, beta, and R.sub.sub parameters of the NMOS transistor 13 and associated parasitic npn transistor 10 are selected to provide the design window.