The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Sep. 26, 2011
Mihaela Ioana Popovici, Leuven, BE;
Johan Swerts, Kessel-lo, BE;
Malgorzata Pawlak, Leuven, BE;
Kazuyuki Tomida, Heverlee, BE;
Min-soo Kim, Leuven, BE;
Jorge Kittl, Hamme-Mille, BE;
Sven Van Elshocht, Leuven, BE;
Mihaela Ioana Popovici, Leuven, BE;
Johan Swerts, Kessel-lo, BE;
Malgorzata Pawlak, Leuven, BE;
Kazuyuki Tomida, Heverlee, BE;
Min-Soo Kim, Leuven, BE;
Jorge Kittl, Hamme-Mille, BE;
Sven Van Elshocht, Leuven, BE;
IMEC, Leuven, BE;
Abstract
The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiOlayer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiOlayer being present in the sub-stack.