The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jul. 29, 2011
Applicant:
Jorge Adrian Kittl, Waterloo, BE;
Inventor:
Jorge Adrian Kittl, Waterloo, BE;
Assignee:
IMEC, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
NiSiFUSI gates can be formed inter alia by further reaction of NiSi/NiSi gate stacks. NiSibehaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO, in contrast to Ni-rich silicides which have significantly higher work function values on HfSiOand negligible work function shifts with dopants on SiO. Formation of NiSican applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.