The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Jun. 24, 2008
Stefan Jakschik, Dresden, DE;
Jorge Adrian Kittl, Waterloo, BE;
Marcus Johannes Henricus Van Dal, Leuven, BE;
Anne Lauwers, Aartselaar, BE;
Masaaki Niwa, Osaka-fu, JP;
Stefan Jakschik, Dresden, DE;
Jorge Adrian Kittl, Waterloo, BE;
Marcus Johannes Henricus van Dal, Leuven, BE;
Anne Lauwers, Aartselaar, BE;
Masaaki Niwa, Osaka-fu, JP;
IMEC, Leuven, BE;
Abstract
A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.