The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
May. 11, 2006
Hongyu Yu, Heverlee, BE;
Chen Jingde, Singapore, SG;
LI Mingfu, Singapore, SG;
Dim-lee Kwong, Singapore, SG;
Serge Biesemans, Leuven, BE;
Jorge Adrian Kittl, Waterloo, BE;
HongYu Yu, Heverlee, BE;
Chen JingDe, Singapore, SG;
Li Mingfu, Singapore, SG;
Dim-Lee Kwong, Singapore, SG;
Serge Biesemans, Leuven, BE;
Jorge Adrian Kittl, Waterloo, BE;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
National University of Singapore (NUS), Singapore, SG;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.