This inventor holds 1 USPTO granted patent. Top assignees: Imec Vzw, National University of Singapore, Texas Instruments Corporation. Active years: 2009.
Company Filing History:
1 out of 1,859 
1 out of 850 
1 out of 29,854 
Years Active: 2009
Title: Chen JingDe: Innovator in Semiconductor Technology
Introduction
Chen JingDe is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. He has developed innovative methods that enhance the performance of n-MOSFET devices, particularly through the use of low work function metals.
Latest Patents
One of Chen JingDe's notable patents is titled "Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET." This patent introduces low work function metals, including alloys of lanthanides, metal, and semiconductor. Specifically, it utilizes an alloy of nickel-ytterbium (NiYb) to fully silicide a silicon gate. The resulting nickel-ytterbium-silicon gate electrode achieves a work function of approximately 4.22 eV, which is significant for improving the efficiency of nMOS devices.
Career Highlights
Throughout his career, Chen has worked with esteemed organizations such as the Interuniversitair Microelektronica Centrum (imec) and the National University of Singapore. His work in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research in semiconductor technology.
Collaborations
Chen JingDe has collaborated with notable colleagues, including HongYu Yu and Li Mingfu. Their combined expertise has further advanced the research and development of innovative semiconductor solutions.
Conclusion
In summary, Chen JingDe is a significant figure in the field of semiconductor technology, with a focus on enhancing n-MOSFET devices through innovative methods. His contributions, particularly in the development of low work function gate electrodes, have the potential to impact the future of electronic devices significantly.