Leuven, Belgium

Serge Biesemans

This inventor holds 5 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: Imec Vzw, International Business Machines Corporation, National University of Singapore. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Serge Biesemans. Retrieved from https://idiyas.com/inventor/serge-biesemans

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 20.0

 

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 13(Granted Patents)


Location History:

  • Mount Kisco, NY (US) (2007)
  • Leuven, BE (2005 - 2019)

Company Filing History:


Years Active: 2005-2026

Loading Chart...
Loading Chart...
5 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Serge Biesemans

Introduction

Serge Biesemans is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advanced materials and methods that enhance the performance and efficiency of electronic devices.

Latest Patents

One of his latest patents is titled "Methods and system of using organosilicates as patterning films." This patent describes techniques for selectively modifying the chemical properties of organosilicates, including periodic mesoporous organosilicates (PMOs), for use in semiconductor fabrication. The methods allow for the manipulation of chemical properties after deposition, enabling these materials to serve as sacrificial patterning films or patterning enabling materials. By employing selective treatments such as annealing, curing, plasma exposure, and silylation, the chemical properties, including etch resistance and hydrophobicity, can be altered to facilitate various patterning operations.

Another significant patent is the "Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET." This invention provides low work function metals for use as gate electrodes in nMOS devices. Specifically, it utilizes an alloy of nickel-ytterbium (NiYb) to fully silicide a silicon gate, resulting in a gate electrode with a work function of approximately 4.22 eV.

Career Highlights

Throughout his career, Serge Biesemans has worked with prominent organizations, including IBM and Interuniversitair Microelektronica Centrum (imec). His experience in these institutions has allowed him to contribute to cutting-edge research and development in semiconductor technologies.

Collaborations

Serge has collaborated with several talented individuals in his field, including HongYu Yu and Chen JingDe. These collaborations have further enriched his work and have led to advancements in semiconductor materials and methods.

Conclusion

Serge Biesemans is a distinguished inventor whose work in semiconductor technology has led to innovative patents that enhance the capabilities of electronic devices. His contributions continue to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…