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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10438806 B1

PDFFull Text
Date of Patent:
Oct. 08, 2019

Filed:

Apr. 27, 2018

Methods and system of using organosilicates as patterning films

Applicant:

Tokyo Electron Limited, Minato-ku, Tokyo, JP;

Inventors:

Kathleen Nafus, Leuven, BE;

Serge Biesemans, Leuven, BE;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

Wood Herron & Evans LLP

Primary Examiner:

Duy Vu N Deo

Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/02216 (2013.01); H01L 21/02348 (2013.01); H01L 21/02359 (2013.01); H01L 21/3105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31138 (2013.01); H01L 29/66545 (2013.01);
Abstract

Techniques herein include methods for selectively modifying chemical properties of organosilicates including periodic mesoporous organosilicates (PMOs) in situ for use in fabrication of semiconductor devices. With techniques herein, such materials are manipulated in their chemical properties after deposition and can accordingly be used as sacrificial patterning films and/or as patterning enabling materials. Using selective treatments such as annealing, curing, plasma exposure, and silylation, chemical properties such as etch resistance and hydrophobicity can be changed to enable a given patterning operation. A given film can be etch resistant for one patterning operation, and then changed to be etch removable for a subsequent patterning operation.

Find Patent Forward Citations

Nafus, Kathleen. (2019). Methods and system of using organosilicates as patterning films (U.S. Patent No. 10438806). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10438806

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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