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For the Inventor, By the Inventor

Austin, TX, United States of America

Dim-Lee Kwong

This inventor holds 23 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Advanced Micro Devices Corporation, The University of Texas System, Ncr Corporation. Active years: 1990-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dim-Lee Kwong. Retrieved from https://idiyas.com/inventor/dim-lee-kwong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23

% Patents Active = 91.3


Average Co-Inventor Count = 3.3

ph-index = 12

Forward Citations = 579(Granted Patents)


Location History:

  • Austin, TX (US) (1990 - 2009)
  • Singapore, SG (2009 - 2012)

Company Filing History:

goldMedal9 out of 13,175 
 
Advanced Micro Devices Corporation
 patents
silverMedal4 out of 5,640 
 
The University of Texas System
 patents
bronzeMedal3 out of 4,492 
 
Ncr Corporation
 patents
4. 2 out of 857 
 
National University of Singapore
 patents
5. 2 out of 29,901 
 
Texas Instruments Corporation
 patents
6. 1 out of 1,562 
 
Agency for Science, Technology and Research
 patents
7. 1 out of 1,865 
 
Imec Vzw
 patents
8. 1 out of 286 
 
Mattson Technology, Inc
 patents
9. 1 out of 993 
 
Novellus Systems Incorporated
 patents
10. 1 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 1990-2012

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Areas of Expertise:
Wafer Arrangement
Semiconductor Device
High-K Dielectric
CMOS Transistor
Oxynitride Dielectric
Charge Storage Density
Silicon Oxynitride
Bipolar Transistor
Epitaxial Silicon
Metal Gate Electrode
Shallow Junction
Yb-Doped Ni
23 patents (USPTO):Explore Patents
1. 8319302 - Wafer arrangement and a method for manufacturing the wafer arrangement (2012-11-27),
2. 7514360 - Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof (2009-04-07),
3. 7504329 - Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET (2009-03-17),
4. 7504328 - Schottky barrier source/drain n-mosfet using ytterbium silicide (2009-03-17),
5. 6911707 - Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance (2005-06-28),
6. 6468856 - High charge storage density integrated circuit capacitor (2002-10-22),
7. 6303520 - Silicon oxynitride film (2001-10-16),
8. 6252283 - CMOS transistor design for shared N+/P+ electrode with enhanced device performance (2001-06-26),
9. 6245652 - Method of forming ultra thin gate dielectric for high performance semiconductor devices (2001-06-12),
10. 6228779 - Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology (2001-05-08),
11. 6225168 - Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof (2001-05-01),
12. 6218720 - Semiconductor topography employing a nitrogenated shallow trench isolation structure (2001-04-17),
13. 6207995 - High K integration of gate dielectric with integrated spacer formation for high speed CMOS (2001-03-27),
14. 6015739 - Method of making gate dielectric for sub-half micron MOS transistors (2000-01-18),
15. 5679585 - Method for forming metal silicide on a semiconductor surface with (1997-10-21),

Title: Dim-Lee Kwong: Pioneering Innovations in Semiconductor Technology

Introduction: Dim-Lee Kwong, a visionary inventor based in Austin, TX, is a trailblazer in the realm of semiconductor technology. With a remarkable portfolio of 23 patents and a relentless drive for pushing technological boundaries, she has made significant contributions to the field of inventions.

Latest Patents: Dim-Lee's latest patents showcase her ingenuity and expertise in semiconductor technology. One of her groundbreaking inventions includes a wafer arrangement and manufacturing method that revolutionizes the alignment of active components on integrated circuits. Another notable patent is the development of a thermal robust semiconductor device using HfN as a metal gate electrode, enhancing the device's performance and durability.

Career Highlights: Dim-Lee Kwong has honed her skills and expertise through her tenure at esteemed companies like Advanced Micro Devices (AMD) and the University of Texas System. Her innovative spirit and dedication to technological advancement have propelled her to the forefront of the semiconductor industry.

Collaborations: Throughout her career, Dim-Lee has collaborated with esteemed professionals in the field, including Mark I Gardner and H Jim Fulford, Jr. These collaborations have not only enriched her projects but have also led to the development of cutting-edge technologies that have reshaped the semiconductor landscape.

Conclusion: Dim-Lee Kwong's passion for innovation, coupled with her exceptional talent for inventing groundbreaking technologies, has established her as a true trailblazer in the world of inventions. Her relentless drive to push the boundaries of technology continues to inspire and drive advancements in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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