The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Oct. 21, 1998
Applicant:
Inventors:
Mark I. Gardner, Cedar Creek, TX (US);
Dim-Lee Kwong, Austin, TX (US);
H. Jim Fulford, Jr., Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
A method for fabricating an integrated circuit is presented wherein a trench is patterned in a field region of a semiconductor substrate. The trench is defined within the semiconductor substrate by a trench floor and trench sidewalls. A liner that primarily comprises nitride is formed upon the trench floor and sidewalls. The liner is then oxidized. A trench dielectric may be formed within the trench and planarized to complete the isolation structure.