The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Mar. 17, 2004
Applicants:
Hong Yu Yu, Singapore, SG;
Ming-fu LI, Singapore, SG;
Dim-lee Kwong, Singapore, SG;
Lakshmi Kanta Bera, Singapore, SG;
Inventors:
Hong Yu Yu, Singapore, SG;
Ming-Fu Li, Singapore, SG;
Dim-Lee Kwong, Singapore, SG;
Lakshmi Kanta Bera, Singapore, SG;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.