This inventor holds 1 USPTO granted patent. Top assignees: Imec Vzw, National University of Singapore, Texas Instruments Corporation. Active years: 2009.
Company Filing History:
1 out of 1,859 
1 out of 850 
1 out of 29,854 
Years Active: 2009
Title: Innovations by Li Mingfu in Semiconductor Technology
Introduction
Li Mingfu is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has developed innovative methods that enhance the performance of n-MOSFET devices. His work focuses on utilizing low work function metals to improve gate electrode efficiency.
Latest Patents
Li Mingfu holds a patent titled "Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET." This patent introduces low work function metals, including alloys of lanthanides, metals, and semiconductors. Specifically, the invention employs an alloy of nickel-ytterbium (NiYb) to fully silicide a silicon gate. The resulting nickel-ytterbium-silicon gate electrode achieves a work function of approximately 4.22 eV, which is significant for enhancing device performance.
Career Highlights
Throughout his career, Li Mingfu has worked with prestigious organizations such as Imec Vzw and the National University of Singapore. His experience in these institutions has allowed him to collaborate with leading experts in the field of semiconductor research.
Collaborations
Li Mingfu has collaborated with several professionals, including HongYu Yu and Chen JingDe, who have contributed to his research endeavors.
Conclusion
Li Mingfu's innovative work in semiconductor technology, particularly in developing low work function gate electrodes, showcases his significant impact on the field. His contributions continue to influence advancements in n-MOSFET devices and semiconductor applications.