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For the Inventor, By the Inventor

Taipei, Taiwan

Jia-Ni Yu

USPTO Granted Patents = 87 

Average Co-Inventor Count = 6.1

ph-index = 4

Forward Citations = 79(Granted Patents)

Forward Citations (Not Self Cited) = 49(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • New Taipei, TW (2019 - 2024)
  • Hsinchu, TW (2020 - 2024)

Company Filing History:

goldMedal87 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2019-2025

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87 patents (USPTO):
1. 12477766 - Semiconductor transistor device structure including nanostructure and gate structure with protection layer and fill layer and method for forming the same (2025-11-18),
2. 12453173 - Integrated circuits with gate cut features (2025-10-21),
3. 12419073 - Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric fin (2025-09-16),
4. 12396248 - Semiconductor device fabrication methods and structures thereof (2025-08-19),
5. 12389675 - Semiconductor device having nanosheet transistor and methods of fabrication thereof (2025-08-12),
6. 12324219 - Integrated circuit including dipole incorporation for threshold voltage tuning in transistors (2025-06-03),
7. 12315731 - Integrated circuit with nanosheet transistors with metal gate passivation (2025-05-27),
8. 12288695 - Method of forming a transistor device having dipole-containing gate dielectric layer and fluorine-containing gate dielectric layer (2025-04-29),
9. 12266544 - Reversed tone patterning method for dipole incorporation for multiple threshold voltages (2025-04-01),
10. 12237418 - Liner for a bi-layer gate helmet and the fabrication thereof (2025-02-25),
11. 12237396 - P-metal gate first gate replacement process for multigate devices (2025-02-25),
12. 12237373 - Field effect transistor and method (2025-02-25),
13. 12237372 - Field effect transistor and method (2025-02-25),
14. 12206005 - Semiconductor structures and methods thereof (2025-01-21),
15. 12205819 - Method and device for forming metal gate electrodes for transistors (2025-01-21),

Title: Jia-Ni Yu: Pioneering Innovator in Semiconductor Technology

Introduction: Jia-Ni Yu, a visionary inventor based in New Taipei, Taiwan, is a true pioneer in the world of technology. With an impressive 55 patents to his name, his relentless pursuit of innovation and commitment to pushing boundaries have cemented his legacy as an influential figure in the industry.

Latest Patents: Among Jia-Ni Yu's latest patents is a groundbreaking semiconductor device structure and methods of forming the same. This innovative structure comprises unique features such as dual gate electrode layers and gate isolation structures, showcasing his advanced knowledge and expertise in semiconductor technology. Additionally, his semiconductor device and method fabricating the same patent further exemplifies his prowess in developing cutting-edge solutions within the field.

Career Highlights: Jia-Ni Yu is currently affiliated with Taiwan Semiconductor Manufacturing Company Limited (TSMC), a prominent player in the semiconductor industry. His contributions to TSMC have undoubtedly played a vital role in advancing technological capabilities and driving innovation within the company.

Collaborations: Throughout his illustrious career, Jia-Ni Yu has collaborated with esteemed colleagues such as Chih-Hao Wang and Chung-Wei Hsu. Together, they have worked on various projects and inventions, further solidifying Jia-Ni Yu's reputation as a collaborative and forward-thinking inventor.

Conclusion: Jia-Ni Yu's innovative spirit and dedication to technological advancement continue to inspire future generations of inventors and innovators. His work in semiconductor technology has not only reshaped the industry but has also set a high standard for excellence. Jia-Ni Yu stands as a shining example of a true pioneer in the world of technology, with a legacy that will undoubtedly endure for years to come.

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