The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 03, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Mao-Lin Huang, Hsinchu, TW;
Jia-Ni Yu, New Taipei, TW;
Lung-Kun Chu, New Taipei, TW;
Chung-Wei Hsu, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu, TW;
Kuan-Lun Cheng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The structure includes a first gate electrode layer having at least three surfaces surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material. The structure also includes a second gate electrode layer disposed below and in contact with the first gate electrode layer, the second gate electrode layer having at least three surfaces surrounded by a second intermixed layer, wherein the second intermixed layer comprises the first material and a fifth material, wherein the first gate electrode layer and the second gate electrode layer are disposed between two adjacent dielectric spacers.