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James Stuart Dunn

This inventor holds 70 USPTO granted patents and 1 published patent application, primarily in Silicon Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. 2 LLC. Active years: 1997-2017.

USPTO Granted Patents = 70 (Patent Applications = 1)

% Patents Active = 65.7

Average Co-Inventor Count = 4.1

ph-index = 14

Forward Citations = 573(Granted Patents)

Forward Citations (Not Self Cited) = 550(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Boynton Beach, FL (US) (2012)
Jericho, VT (US) (1997 - 2017)

Company Filing History:

64 out of 166,159

International Business Machines Corporation

Globalfoundries U.S. 2 LLC

patents

Years Active: 1997-2017

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Areas of Expertise:

Silicon

Bipolar Transistors

Field Effect Transistors

MIM Capacitors

BiCMOS Technology

High-Q Resonators

SiGe Technology

Integrated Circuits

Low Harmonic RF Switch

Epitaxial Layer

Semiconductor Devices

Trench Isolation

70 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9818688 - Dielectric region in a bulk silicon substrate providing a high-Q passive resonator (2017-11-14),

2. 9653477 - Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming (2017-05-16),

3. 9646993 - Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming (2017-05-09),

4. 9437539 - Dielectric region in a bulk silicon substrate providing a high-Q passive resonator (2016-09-06),

5. 9424992 - Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture (2016-08-23),

6. 9355972 - Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator (2016-05-31),

7. 9355936 - Flattened substrate surface for substrate bonding (2016-05-31),

8. 9343589 - Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures (2016-05-17),

9. 9337323 - Trench isolation for bipolar junction transistors in BiCMOS technology (2016-05-10),

10. 9269787 - Base profile of self-aligned bipolar transistors for power amplifier applications (2016-02-23),

11. 9257324 - Forming structures on resistive substrates (2016-02-09),

12. 9105677 - Base profile of self-aligned bipolar transistors for power amplifier applications (2015-08-11),

13. 8956945 - Trench isolation for bipolar junction transistors in BiCMOS technology (2015-02-17),

14. 8872305 - Integrated circuit structure having air-gap trench isolation and related design structure (2014-10-28),

15. 8857022 - Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors (2014-10-14),

Sure, here is the article about inventor James Stuart Dunn:

Title: The Inventor Profile: James Stuart Dunn

Introduction:

James Stuart Dunn is a highly accomplished inventor known for his pioneering work in the field of integrated circuits. With a location in Jericho, VT (US), Dunn has an impressive portfolio of 70 patents to his name, showcasing his expertise and innovative spirit.

Latest Patents:

Two of his latest patents include:

1. Dielectric region in a bulk silicon substrate providing a high-Q passive resonator: This patent highlights structures and methods for creating a dielectric region in a bulk silicon substrate of a mixed-signal integrated circuit, enhancing the quality of passive resonators.

2. Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming: This patent features various embodiments of FETs and methods for their formation, including trench formation and dielectric filling.

Career Highlights:

James Stuart Dunn has made significant contributions to companies such as IBM and Globalfoundries Inc., where his innovative ideas have helped push the boundaries of integrated circuit technology. His ability to blend theory with practical applications has earned him a stellar reputation in the industry.

Collaborations:

Throughout his career, Dunn has collaborated with esteemed individuals such as David Louis Harame and Qizhi Liu. Together, they have worked on groundbreaking projects that have paved the way for advancements in the field of integrated circuits.

Conclusion:

In conclusion, James Stuart Dunn stands out as a visionary inventor whose passion for innovation has led to the development of cutting-edge technologies in the realm of integrated circuits. His dedication to pushing the boundaries of what is possible serves as an inspiration to aspiring inventors and researchers in the field.

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