logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9818688 B1

PDFFull Text
Expired
Date of Patent:
Nov. 14, 2017

Filed:

Nov. 19, 2015

Dielectric region in a bulk silicon substrate providing a high-q passive resonator

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

James S. Dunn, Jericho, VT (US);

Zhong-Xiang He, Essex Junction, VT (US);

Qizhi Liu, Lexington, MA (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Gibb & Riley, LLC

Steven J. Meyers

Primary Examiner:

Michael Jung

Assistant Examiner:

Mikka Liu

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/66 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/762 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 23/5227 (2013.01); H01L 23/53295 (2013.01); H01L 23/66 (2013.01); H01L 28/40 (2013.01); H01L 29/0649 (2013.01); H01L 29/16 (2013.01); H01L 28/10 (2013.01); H01L 2223/6672 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Structures and methods of making a dielectric region in a bulk silicon (Si) substrate of a mixed-signal integrated circuit (IC) provide a high-Q passive resonator. Deep trenches within the bulk Si substrate in <100> directions are expanded by wet etching to form contiguous cavities, which are filled by Si oxide to form a dielectric region. The dielectric region enhances the quality (Q) of an overlying passive resonator, formed in metallization layers of the mixed-signal IC.

Find Patent Forward Citations

Dunn, James. (2017). Dielectric region in a bulk silicon substrate providing a high-q passive resonator (U.S. Patent No. 9818688). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9818688

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…