The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 25, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
James S. Dunn, Jericho, VT (US);
Qizhi Liu, Lexington, MA (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); G06F 17/50 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); G06F 17/5045 (2013.01); H01L 29/0649 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/66242 (2013.01); H01L 29/7378 (2013.01);
Abstract
Device structures and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region. A collector is formed in the device region, and a second isolation structure is formed in the device region. The second isolation structure defines a boundary for the collector. The second isolation structure is laterally positioned relative to the first isolation structure to define a section of the device region between the first and second isolation structures.