Seoul, South Korea

Hyunmog Park

This inventor holds 32 USPTO granted patents and 9 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyunmog Park. Retrieved from https://idiyas.com/inventor/hyunmog-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 59(Granted Patents)


Company Filing History:


Years Active: 2018-2026

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Areas of Expertise:
Semiconductor Device
Integrated Circuit
Memory Device
3D Memory
Vertical Channel
Magnetic Memory
Fusion Memory
Electronic System
Resistive Memory
Image Sensor
Volatile Memory
Non-Volatile Memory
32 patents (USPTO):Explore Patents

Title: Innovations of Hyunmog Park: A Pioneer in Semiconductor Technology

Introduction

Hyunmog Park, based in Seoul, South Korea, is a distinguished inventor known for his significant contributions to the field of semiconductor technologies. With a remarkable portfolio of 21 patents, he exemplifies innovation and expertise in developing advanced electronic devices.

Latest Patents

Among Hyunmog Park's latest patents is a sophisticated semiconductor device design. This innovative device includes a conductive line on a substrate, featuring both a first and second gate electrode separated by a gate isolation insulating layer. It comprises a first channel layer with a first source/drain region, along with a second channel layer and corresponding second source/drain region. This intricate structure allows for enhanced performance in semiconductor applications.

Additionally, Park has patented a groundbreaking fusion memory device and its fabrication method. This device integrates a first memory device with a first substrate and a second memory device on the inactive surface of a second substrate. Notably, a non-memory device is situated between the two memory cell circuits, controlling the electrical operations. This architecture signifies a notable advancement in memory technology, paving the way for more efficient data processing.

Career Highlights

Hyunmog Park is currently affiliated with Samsung Electronics Co., Ltd., where his inventions significantly propel the company's goals in semiconductor innovation. His work not only enriches the corporate landscape but also enhances technological standards globally.

Collaborations

Throughout his career, Hyunmog has collaborated with talented colleagues such as Joongshik Shin and Minhee Cho. Together, they have combined their expertise to foster an environment of innovation, yielding impactful advancements in semiconductor technologies.

Conclusion

Hyunmog Park stands as a testament to the transformative impact that dedicated inventors can have in the technology sector. His 21 patents reflect his commitment to innovation, setting a high standard in semiconductor design and application. As he continues his work at Samsung Electronics Co., Ltd., the tech community eagerly anticipates his future contributions to the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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