Semiconductor device including variable resistance pattern and electronic system including the semiconductor device

Abstract

A semiconductor device is provided. The semiconductor device includes: gate lines spaced apart from each other between a conductive layer and a conductive pad; and a channel structure extending through the gate lines. The channel structure includes: a channel region which defines a columnar space, and includes a first channel end in contact with the conductive pad and a second channel end in contact with the conductive layer; and a variable resistance pattern including an outer sidewall and a first end, the outer sidewall overlapping first gate lines, from among the gate lines, in a horizontal direction with the channel region therebetween, the first end being spaced apart from the first channel end of the channel region, and the variable resistance pattern being offset from, in the vertical direction, at least one second gate line that is closest, from among the gate lines, to the conductive pad.