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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12720742 B1

PDFFull Text
Date of Patent:
Aug. 25, 2026

Filed:

Jan. 12, 2023

Semiconductor device including bit line pad, method for manufacturing the same and electronic system including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myunghun Woo, Hwaseong-si, KR;

Jooheon Kang, Seoul, KR;

Hyunmog Park, Seoul, KR;

Jongho Woo, Hwaseong-si, KR;

Suseong Noh, Suwon-si, KR;

Youngji Noh, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Sarah K Salerno

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/49 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/49 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a gate stack structure including alternately stacked insulating patterns and conductive patterns; a memory channel structure extending through the gate stack structure; and a bit line pad on the memory channel structure, wherein the memory channel structure includes a variable resistance layer, a channel layer surrounding the variable resistance layer, and a channel insulating layer surrounding the channel layer, and a bottom surface of the bit line pad contacts a top surface of the variable resistance layer, a top surface of the channel layer, and a top surface of the channel insulating layer.

Find Patent Forward Citations

Woo, Myunghun. (2026). Semiconductor device including bit line pad, method for manufacturing the same and electronic system including the same (U.S. Patent No. 12720742). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12720742

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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