The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Nov. 15, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyunmog Park, Seoul, KR;

Jungyu Lee, Hwaseong-si, KR;

Daehwan Kang, Seongnam-si, KR;

Sungho Eun, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/84 (2023.02); G11C 13/0023 (2013.01); H10N 70/011 (2023.02); H10N 70/882 (2023.02);
Abstract

A resistive memory device includes: memory cells overlapping one another in a vertical direction within a cell array region and each including a switching element and a variable resistive element; first conductive lines each being connected to the switching element; a second conductive line connected to the variable resistive element and conductive pads arranged in a connection region and connected to respective one ends of the first conductive lines, respectively, and having different lengths in the second horizontal direction. A lower conductive pad from among the conductive pads includes a first portion covered by an upper conductive pad, and a second portion not covered by the upper conductive pad, and a thickness of each of the first and second portions in the vertical direction is greater than a thickness of each of the first conductive lines in the vertical direction.


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