The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Jan. 12, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yukio Hayakawa, Suwon-si, KR;
Bongyong Lee, Suwon-si, KR;
Hyunmog Park, Suwon-si, KR;
Siyeon Cho, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10B 51/30 (2023.02);
Abstract
A semiconductor memory device includes a back gate electrode, a gate electrode on the back gate electrode, a channel layer between the gate electrode and the back gate electrode, a gate insulating layer between the channel layer and the gate electrode, and a ferroelectric layer between the back gate electrode and the channel layer.