The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Mar. 09, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minhee Cho, Suwon-si, KR;
Mintae Ryu, Hwaseong-si, KR;
Sungwon Yoo, Hwaseong-si, KR;
Wonsok Lee, Suwon-si, KR;
Hyunmog Park, Seoul, KR;
Kiseok Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device including a conductive line on a substrate, a first gate electrode on the conductive line, a second gate electrode separated by a gate isolation insulating layer on the first gate electrode, a first channel layer on a side surface of the first gate electrode, with a first gate insulating layer therebetween, a first source/drain region on another side surface of the first gate electrode, a second channel layer on another side surface of the second gate electrode on a side that is opposite to the first channel layer, with a second gate insulating layer therebetween, a second source/drain region on the second channel layer, and a third source/drain region on the first channel layer and on a side surface of the second gate electrode on a same side as the first channel layer may be provided.