The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

May. 06, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyunmog Park, Seoul, KR;

Jungyu Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H01L 23/528 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); H01L 23/5283 (2013.01); H10N 70/826 (2023.02);
Abstract

A three-dimensional memory device includes: a plurality of word line groups including a plurality of word lines; a plurality of bit line groups extending in a vertical direction and including a plurality of bit lines spaced apart from the plurality of word lines; a plurality of memory cells arranged between the plurality of word lines and the plurality of bit lines and including a switching component and a variable resistance memory component; a plurality of global bit line groups connected to the plurality of bit line groups, wherein each of the plurality of global bit line groups includes a plurality of global bit lines electrically connected to a plurality of bit lines included in one bit line group, respectively; and a pad structure including a plurality of connection units and a plurality of pad layers, wherein the plurality of connection units are connected to the plurality of word line groups.


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