Semiconductor devices having vertical channel transistor structures and methods of fabricating the same

Abstract

A semiconductor device includes: a conductive line that extends in a first direction on a substrate; an insulating pattern layer on the substrate and having a trench that extends in a second direction, the trench having an extension portion that extends into the conductive line; a channel layer on opposite sidewalls of the trench and connected to a region, exposed by the trench, of the conductive line; first and second gate electrodes on the channel layer, and respectively along the opposite sidewalls of the trench; a gate insulating layer between the channel layer and the first and second gate electrodes; a buried insulating layer between the first and second gate electrodes within the trench; and a first contact and a second contact, respectively buried in the insulating pattern layer, and respectively connected to upper regions of the channel layer.