The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jul. 15, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jeongsoon Kang, Gumi-si, KR;
Buil Jung, Hwaseong-si, KR;
Hyunmog Park, Seoul, KR;
Wonsok Lee, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H01L 29/42356 (2013.01); H01L 29/4236 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01);
Abstract
An image sensor includes a substrate having a pixel area in which a plurality of active areas is defined. A first transistor includes a first gate electrode including a buried gate portion. The buried gate portion is buried in the substrate in a first active area selected from the plurality of active areas. A second transistor includes a second gate electrode overlapping the buried gate portion on the first active area in a vertical direction.