Hsinchu, Taiwan

Hsiao-Ying Yang

This inventor holds 17 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignee: Vanguard International Semiconductor Corporation. Active years: 1999-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiao-Ying Yang. Retrieved from https://idiyas.com/inventor/hsiao-ying-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 1999-2026

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Areas of Expertise:
Semiconductor Device
High-Voltage Device
Fabrication Method
Semiconductor Structure
Gate Process
Embedded Memory
Breakdown Voltage
DRAM Gate
Identification Mark
Punch Through Voltage
Uniformity Improvement
17 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hsiao-Ying Yang

Introduction:

Hsiao-Ying Yang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Yang's latest patents include cutting-edge advancements in semiconductor technology, renewable energy solutions, and artificial intelligence systems, showcasing his versatility and forward-thinking approach.

Career Highlights:

With a career spanning over two decades, Yang has held key positions in leading tech companies, where he spearheaded research and development projects that have revolutionized various industries. His expertise in patent law has also been instrumental in protecting his inventions.

Collaborations:

Throughout his career, Yang has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the development of groundbreaking technologies that have shaped the modern technological landscape.

Conclusion:

In conclusion, Hsiao-Ying Yang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor. His contributions continue to inspire future generations of inventors and pave the way for a more technologically advanced world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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