The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jul. 22, 2008
Chih-ping Lin, Taipei County, TW;
Pi-kuang Chuang, Taichung, TW;
Hung-li Chang, Hsinchu County, TW;
Shih-ming Chen, Hsinchu, TW;
Hsiao-ying Yang, Hsinchu, TW;
Ya-sheng Liu, Taipei, TW;
Chih-Ping Lin, Taipei County, TW;
Pi-Kuang Chuang, Taichung, TW;
Hung-Li Chang, Hsinchu County, TW;
Shih-Ming Chen, Hsinchu, TW;
Hsiao-Ying Yang, Hsinchu, TW;
Ya-Sheng Liu, Taipei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.