The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
May. 29, 2003
Applicant:
Hsiao-ying Yang, Hsinchu, TW;
Inventor:
Hsiao-Ying Yang, Hsinchu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8234 ;
U.S. Cl.
CPC ...
Abstract
A high-voltage device with improved punch through voltage. A semiconductor silicon substrate has a high-voltage device region on which a gate structure is patterned. A lightly doped region is formed in the substrate and lateral to the gate structure. A spacer is formed on the sidewall of the gate structure. A heavily doped region is formed in the lightly doped region and lateral to the spacer. A lateral distance is kept between the spacer and the heavily doped region.