The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jun. 25, 2024
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chung-Ren Lao, Taichung City, TW;
Hsiao-Ying Yang, Taichung City, TW;
Hsing-Chao Liu, Hsinchu County, TW;
Hsueh-Chun Liao, Hsinchu County, TW;
Ching-Chung Chen, Penghu County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes a first well region disposed in a substrate and a first doped region buried in the first well region. The first doped region includes a middle portion and a peripheral portion. The first well region includes a continuous block directly above the middle portion. A second doped region is disposed in the first well region and directly above the peripheral portion. A third doped region is disposed in the first well region. A first isolation structure is located between the second doped region and the third doped region. An anode electrode is disposed above the substrate and electrically connected to the continuous block of the first well region. A cathode electrode is disposed above the substrate and electrically connected to the third doped region.