The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Aug. 01, 2017
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Wei-Lun Hsia, Hsinchu, TW;
Chun-Hsien Lin, Jhudong Township, Hsinchu County, TW;
Hsiao-Ying Yang, Hsinchu, TW;
VANGUARD ENTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor structure includes a conductive feature on a substrate. A plurality of first dielectric layers are disposed on the conductive feature, and stress directions of at least two of the first dielectric layers are different from one another. A first hole penetrates through the plurality of the first dielectric layers to expose the conductive feature. A first conductive plug conformally covers the first hole and is electrically connected to the conductive feature. A first insulating plug on the first conductive plug fills the first hole.