The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Aug. 26, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Hung-Chih Tan, Kaohsiung, TW;
Hsing-Chao Liu, Hsinchu County, TW;
Hsiao-Ying Yang, Hsinchu, TW;
Chih-Cherng Liao, Hsinchu County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A high-voltage semiconductor device includes a substrate, a first insulating structure, a gate, a drain region, a source region and a doped region. The substrate has a first conductive type, and the first insulating structure is disposed on the substrate. The drain region and the source region are disposed in the substrate. The source region has a first portion and a second portion. The first portion has the second conductive type and the second portion has the first conductive type. The gate is disposed on the substrate, between the source region and the drain region to partially cover a side of the first insulating structure. The doped region is disposed in the substrate and has a first doped region and a second doped region, and the first doped region and the second doped region both include the first conductive type and separately disposed under the first insulating structure.