The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 04, 2021
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chung-Ren Lao, Taichung, TW;
Kuan-I Ho, New Taipei, TW;
Kuo-Chien Hsu, Taipei, TW;
Che-Hua Chang, Hsinchu, TW;
Hsiao-Ying Yang, Hsinchu, TW;
Chih-Cherng Liao, Hsinchu County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The present disclosure provides a high voltage semiconductor device includes a substrate, a first well region, a second well region, a source, a drain, a first electrode structure and a second electrode structure. The first well region and the second well region are disposed in the substrate, and which includes a first conductive type and a second conductive type which are complementary with each other. The source and the drain are respectively disposed within the first well region and the second well region. The first electrode structure and the second electrode structure are both disposed on the substrate, and the distance between the top surface of an electrode of the first electrode structure and the top surface of the substrate includes a first height and a second height which are different from each other.