Company Filing History:
Years Active: 2022
Title: Kuan-I Ho: Innovator in High Voltage Semiconductor Technology
Introduction
Kuan-I Ho is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in high voltage devices. His innovative work has led to the development of a patented technology that enhances the performance and reliability of semiconductor devices.
Latest Patents
Kuan-I Ho holds a patent for a high voltage semiconductor device. This invention includes a substrate, a first well region, a second well region, a source, a drain, a first electrode structure, and a second electrode structure. The first well region and the second well region are disposed in the substrate, featuring a first conductive type and a second conductive type that are complementary to each other. The source and the drain are respectively located within the first well region and the second well region. Additionally, the first electrode structure and the second electrode structure are both positioned on the substrate, with the distance between the top surface of an electrode of the first electrode structure and the top surface of the substrate comprising a first height and a second height that differ from each other. This innovation is crucial for advancing high voltage semiconductor applications.
Career Highlights
Kuan-I Ho is currently employed at Vanguard International Semiconductor Corporation, where he continues to push the boundaries of semiconductor technology. His work at this leading company has allowed him to collaborate with other talented professionals in the field.
Collaborations
Some of Kuan-I Ho's notable coworkers include Chung-Ren Lao and Kuo-Chien Hsu. Their collective expertise contributes to the innovative environment at Vanguard International Semiconductor Corporation.
Conclusion
Kuan-I Ho's contributions to high voltage semiconductor technology exemplify the spirit of innovation in the field. His patented inventions and collaborative efforts continue to shape the future of semiconductor devices.