Hong-Ji Lee

USPTO Granted Patents = 33 (Patent Applications = 2)

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 168(Granted Patents)

Location History:

Taoyuan Hsien, TW (1999 - 2003)
Gueishan Township, TW (2008)
Taoyuan County, TW (2008 - 2016)
Gueishan Township, Taoyuan County, TW (2013 - 2016)
Hsinchu, TW (1997 - 2019)
Taoyuan, TW (2011 - 2024)

Company Filing History:

26 out of 3,595

Macronix International Co., Ltd.

patents

3 out of 3

Nano-architect Research Corporation

patents

2 out of 9,138

Industrial Technology Research Institute

National Science Council

patents

6. 1 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 1997-2025

where 'Filed Patents' based on already Granted Patents

33 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12484227 - Memory device with source line over a bonding pad (2025-11-25),

2. 12048154 - Memory device and manufacturing method thereof (2024-07-23),

3. 10424593 - Three-dimensional non-volatile memory and manufacturing method thereof (2019-09-24),

4. 10204859 - Interconnect structure and fabricating method thereof (2019-02-12),

5. 9922876 - Interconnect structure and fabricating method thereof (2018-03-20),

6. 9881809 - Semiconductor device and method of fabricating the same (2018-01-30),

7. 9627247 - Semiconductor device and method of fabricating the same (2017-04-18),

8. 9449915 - Semiconductor device and method of manufacturing the same (2016-09-20),

9. 9425086 - Method of controlling contact hole profile for metal fill-in (2016-08-23),

10. 9337036 - Method of forming copper sulfide film for reducing copper oxidization and loss (2016-05-10),

11. 9305840 - Cluster system for eliminating barrier overhang (2016-04-05),

12. 9299667 - Method of shaping densely arranged PL gates and peripheral MOS gates for ILD oxide fill-in (2016-03-29),

13. 9287285 - Self-aligned liner method of avoiding PL gate damage (2016-03-15),

14. 9269660 - Multilayer connection structure (2016-02-23),

15. 9224803 - Formation of a high aspect ratio contact hole (2015-12-29),

Title: Innovations and Contributions of Hong-Ji Lee in Memory Device Technology

Introduction

Hong-Ji Lee, based in Hsinchu, Taiwan, is a prominent inventor renowned for his significant contributions to the field of memory devices. With an impressive portfolio of 32 patents, Lee has advanced technology in non-volatile memory systems, showcasing his expertise and innovation in this critical area of electronics.

Latest Patents

Among his latest patents, two notable inventions stand out. The first is a method for a memory device that features a first stack structure and a second stack structure, along with a channel pillar and a storage layer. This innovative design enhances the overall efficiency and functionality of memory devices. The second recent patent involves a three-dimensional non-volatile memory system, which integrates an advanced charge storage structure with a carefully arranged stacked structure comprising insulating layers and gates. Together, these inventions reflect Lee's commitment to pushing the boundaries of memory technology.

Career Highlights

Throughout his career, Hong-Ji Lee has made substantial impacts while working at leading companies in the tech industry. He has held significant positions at Macronix International Co., Ltd. and Nano-architect Research Corporation. His role in these organizations has allowed him to lead innovative projects that resulted in groundbreaking patents in memory technology.

Collaborations

Lee has collaborated with notable individuals such as Fang-Hao Hsu and Andrew Teh Hu. These partnerships have fostered a creative environment where innovative ideas can flourish, allowing for the successful development of advanced memory solutions.

Conclusion

Hong-Ji Lee's work in memory device technology illustrates his dedication to innovation and excellence. With a solid foundation in research and collaboration, his inventions continue to shape the future of non-volatile memory systems, highlighting the importance of continued exploration and advancement in this vital field.

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