The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jan. 24, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Zusing Yang, Hsin-chu, TW;
Hong-Ji Lee, Hsin-chu, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/165 (2013.01); H01L 21/0234 (2013.01); H01L 21/0273 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 21/02639 (2013.01);
Abstract
Effects of copper oxide formation in semiconductor manufacture are mitigated by etching with sulfide plasmas. The plasmas form protective copper sulfide films on copper surfaces and prevent copper oxide formation. When copper oxide formation does occur, the sulfide plasmas are able to transform the copper oxide into acceptable or more conductive copper compounds. Non-oxide copper compounds are removed using clear wet strips.