The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Jun. 10, 2021
Macronix International Co., Ltd., Hsinchu, TW;
Hong-Ji Lee, Taoyuan, TW;
Tzung-Ting Han, Hsinchu, TW;
Lo Yueh Lin, Hsinchu, TW;
Chih-Chin Chang, New Taipei, TW;
Yu-Fong Huang, Hsinchu, TW;
Yu-Hsiang Yeh, Miaoli County, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A memory device includes a first stack structure, a second stack structure, a channel pillar, a storage layer, and a conductive pillar. The first stack structure includes a first insulating layer and a first conductive layer located on the first insulating layer. The second stack structure is located on the first stack structure and includes a plurality of second conductive layers and a plurality of second insulating layers which alternate with each other. The channel pillar penetrates through the second stack structure and extends to the first stack structure. The storage layer is located between the channel pillar and the first stack structure and between the channel pillar and the second stack structure. The conductive pillar is located in the first conductive layer and electrically connected to the first conductive layer and the substrate.